document number: 83657 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.6, 23-feb-11 1 optocoupler, phototransistor output, low input current, with base connection mct5211 vishay semiconductors description the mct5211 is a optocoupler with a high efficiency aigaas led optically coupled to a np n phototransistor. the high performance led makes operat ion at low input currents practical. the coupler is housed in a six pin dip package. isolation test voltage is 5300 v rms . because these parts have guaranteed ctrs at 1 ma and 3 ma, they are ideally suitab le for interfacing from cmos to ttl or lsttl to ttl. they are also ideal for telecommunications applications such as ring or off-hook detection. features ? saturation ctr - mct5211, > 100 % at i f = 1.6 ma ? high isolation voltage, 5300 v rms ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h, double protection ? bsi iec 60950; iec 60065 ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 (pending), available with option 1 ? csa 93751 note ? additional options may be possible, please contact sales office. (1) also available in tubes, do not put t on the end. i179004-7 1 2 3 6 5 4 b c e a c nc v de i179004-3 ordering information mct5211-x0##t part number package option tape and reel agency certified/package ctr (%) 1 ma ul, bsi, csa > 110 dip-6 mct5211 smd-6, option 7 mct5211-x007t (1) smd-6, option 9 mct5211-x009t (1) ul, bsi, csa, vde > 110 smd-6, option 7 mct5211-x017t > 0.1 mm > 0.7 mm 7.62 mm dip option 7 option 9
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83657 2 rev. 1.6, 23-feb-11 mct5211 vishay semiconductors optocoupler, phototransistor output, low input current, with base connection note ? stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for e xtended periods of the time ca n adversely affect reliability. note ? minimum and maximum values are testing requirements. typical valu es are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input peak reverse voltage v r 6v forward continuos current i f 40 ma power dissipation p diss 75 mw derate linearly from 25 c 1mw/c output collector emitter breakdown voltage bv ceo 30 v emitter collector breakdown voltage bv eco 7v collector base breakdown voltage bv cbo 70 v power dissipation p diss 200 mw derate linearly from 25 c 2.6 mw/c coupler isolation test voltage v iso 5300 v rms total package dissipation (led and detector) p tot 260 mw derate linearly from 25 c 3.5 mw/c creepage distance ? 7mm clearance distance ? 7mm comparative tracking index per din iec 112/vd e 0303, part 1 cti 175 isolation resistance v io = 500 v, t amb = 25 c r io ? 10 12 ? v io = 500 v, t amb = 100 c r io ? 10 11 ? operating temperature t amb - 55 to + 100 c storage temperature t stg - 55 to + 150 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit input forward voltage i f = 5 ma v f 1.2 1.5 v reverse voltage i r = 10 a v r 6v output dc forward current gain v ce = 5 v, i c = 100 a h fe 100 200 collector emitter breakdown voltage i c = 100 a bv ceo 30 v emitter collector breakdown voltage i e = 100 a bv eco 7v collector base breakdown voltage i e = 10 a bv cbo 70 v collector emitter leakage voltage v ce = 10 v i ceo 5 100 na coupler saturation voltage i f = 1.6 ma, i c = 1.6 ma mct5211 v cesat 0.25 0.4 v
document number: 83657 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.6, 23-feb-11 3 mct5211 optocoupler, phototransistor output, low input current, with base connection vishay semiconductors fig. 1 - switching schematic fig. 2 - switching waveform current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit current transfer ratio (collector emi tter saturated) v ce = 0.4 v, i f = 1.6 ma mct5211 ctr cesat 100 200 % v ce = 0.4 v, i f = 1 ma mct5211 ctr cesat 75 150 % current transfer ratio v ce = 5 v, i f = 1.6 ma mct5211 ctr 150 300 % v ce = 5 v, i f = 1 ma mct5211 ctr 110 225 % current transfer ratio (collector base) v ce = 4.3 v, i f = 1.6 ma mct5211 ctr cb 0.3 0.6 % v ce = 4.3 v, i f = 1 ma mct5211 ctr cb 0.25 0.5 % switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit propagation delay high to low r l = 750 ? , i f = 1.6 ma, v cc = 5 v mct5211 t phl 20 s r l = 1.5 k ? , i f = 1 ma, v cc = 5 v mct5211 t phl 40 s propagation delay low to high r l = 750 ? , i f = 1.6 ma, v cc = 5 v mct5211 t plh 20 s r l = 1.5 k ? , i f = 1 ma, v cc = 5 v mct5211 t plh 40 s imct5210_18 input v out v = 5 v cc r l imct5210_03 i f t r v o t d t s t f t phl t pl h v = 1.5 v th
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83657 4 rev. 1.6, 23-feb-11 mct5211 vishay semiconductors optocoupler, phototransistor output, low input current, with base connection typical characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - led forward current vs. forward voltage fig. 5 - collector base photocurrent vs. led current fig. 6 - photocurre nt vs. led current fig. 7 - collector base ctr vs. led current fig. 8 - collector base ctr vs. led current imct5210_01 0 5 10 15 20 25 30 35 v f - led forward voltage (v) i f - led current (ma) 1.0 1.1 1.2 1.3 1.4 imct5210_04 1.4 1.3 1.2 1.1 1.0 0.1 1 10 100 v f - led forward voltage (v) i f - led current (ma) imct5210_05 40 35 30 25 20 15 10 5 0 0 50 100 150 200 250 300 i f - led current (ma) i cb - photocurrent (a) imct5210_05 100 10 1 0.1 0.1 1 10 100 1000 i f - led current (ma) i cb - photocurrent (a) imct5210_07 35 30 25 20 15 10 5 0 0.0 0.2 0.4 0.6 0.8 1.0 i f - led current (ma) ctr cb - collector base ctr (%) imct5210_08 100 10 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 i f - led current (ma) ctr cb - collector base - ctr (%)
document number: 83657 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.6, 23-feb-11 5 mct5211 optocoupler, phototransistor output, low input current, with base connection vishay semiconductors fig. 9 - ctr vs. led current fig. 10 - collector current vs. led current fig. 11 - collector current vs. led current fig. 12 - transistor current gain vs. base current fig. 13 - transfer curve fig. 14 - transfer curve imct5210_09 100 10 1 .1 100 200 300 400 500 600 700 i f - led current (ma) ratio (%) v ce 10 v 5 v 2 v 1 v 0.4 v imct5210_10 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 i f - led current (ma) i ce - collector current (ma) v ce 10 v 5 v 2 v 1 v 0.4 v imct5210_11 100 10 1 0.1 0.1 1 10 100 i f - led current (ma) i ce - collector current (ma) v ce 10 v 5 v 2 v 1 v 0.4 v imct5210_12 1000 100 10 1 .1 100 200 300 400 500 600 700 800 i b - base current (a) h fe - dc current gain (i ce /i b ) v ce 10 v 5 v 2 v 1 v 0.4 v imct5210_13 1000 100 10 1 0.1 0.1 1 10 100 500 600 700 800 i cb - photocurrent (ma) i f - led current (ma) h fe - transistor gain v ce = 10 v i ce = i cb x h fe imct5210_14 1000 100 10 1 .1 .1 1 10 100 100 200 300 400 500 600 700 i f - led current (ma) h fe - transistor gain v ce = 0.4 v i ce =i cb xh fe i cb - photocurrent (a)
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83657 6 rev. 1.6, 23-feb-11 mct5211 vishay semiconductors optocoupler, phototransistor output, low input current, with base connection fig. 15 - propagation delay vs. base emitter resistor fig. 16 - propagation delay vs. base emitter resistor fig. 17 - propagation delay vs. base emitter resistor imct5210_15 10 7 10 6 10 5 10 20 30 40 50 60 70 propagation delay (s) i f = 1 ma r l = 10 k v th = 1.5 v t phl t plh v ce = 5 v r be - base emitter resistor imct5210_16 10 7 10 6 10 5 0 10 20 30 40 50 r be - base emitter resistor propagation delay (s) i f = 1.6 ma r l = 4.7 k v th = 1.5 v t plh t plh v ce = 5 v imct5210_17 10 7 10 6 10 5 10 4 0 5 10 15 20 25 30 35 40 r be - base emitter resistor probagation delay (s) i f = 3 ma r l = 3 k v th = 1.5 v v ce = 5 v t phl t plh
document number: 83657 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.6, 23-feb-11 7 mct5211 optocoupler, phototransistor output, low input current, with base connection vishay semiconductors package dimensions in millimeters package marking (example) notes ? only option 7 is reflected in the package marking. ? the vde logo is only marked on option 1 parts. ? tape and reel suffix (t) is not part of the package marking. i178004 0.25 typ. 2.95 0.5 3.555 0.255 0.8 min. 7.62 typ. 0.85 0.05 2.54 typ. 1 min. 0.5 0.05 6.4 0.1 8.6 0.1 pin one id 6 5 4 1 2 3 18 3 to 9 7.62 to 8.81 4 typ. iso method a 1.2 0.1 option 7 20802-19 option 9 8 min. 7.62 typ. 4.3 0.3 0.6 min. 10.3 max. 0.7 min. 10.3 max. 7.62 typ. 8 min. 0.6 min. 0.1 0.1 3.6 0.3 2.54 r 0.25 1.78 0.76 1.52 8 min. 11.05 2.54 r 0.25 1.78 0.76 1.52 8 min. 11.05 21764-98 mct5211 v yww h 68
vishay dip-6a document number 83263 rev. 1.1, 10-dec-03 vishay semiconductors www.vishay.com 1 dip-6a package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a
www.vishay.com 2 document number 83263 rev. 1.1, 10-dec-03 vishay dip-6a vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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